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BFN21 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BFN21 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 4 page ![]() Semiconductor Group 1 PNP Silicon High-Voltage Transistor BFN 21 Maximum Ratings Type Ordering Code (tape and reel) Marking Package1) Pin Configuration BFN 21 Q62702-F1059 DF SOT-89 B C E 1 2 3 Parameter Symbol Values Unit Collector-emitter voltage VCE0 300 V Collector-base voltage VCB0 300 Collector-emitter voltage, RBE = 2.7 k Ω VCER 300 Collector current IC 50 mA Total power dissipation, TS = 120 ˚C Ptot 1W Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 90 K/W Junction - soldering point Rth JS ≤ 30 Emitter-base voltage VEB0 5 Peak collector current ICM 100 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. q Suitable for video output stages in TV sets and switching power supplies q High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q Complementary type: BFN 20 (NPN) 5.91 |
Similar Part No. - BFN21 |
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Similar Description - BFN21 |
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