2SA1201 datasheet(1/2 Pages) HTSEMI

Part #	2SA1201

Description	TRANSISTOR(PNP)

PDF	2 Pages

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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1 / 2 page

TRANSISTOR(PNP)

FEATURES

High voltage

High transition frequency

Complementary to 2SC2881

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.8

A

PC

Collector Power Dissipation

0.5

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-1mA,IE=0

-120

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA,IB=0

-120

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-1mA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-120V,IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-0.1

μA

DC current gain

hFE

VCE=-5V,IC=-100mA

80

240

Collector-emitter saturation voltage

VCE(sat)

IC=-500mA,IB=-50mA

-1

V

Base-emitter voltage

VBE

VCE=-5V,IC=-500mA

-1

V

Transition frequency

fT

VCE=-5V,IC=-100mA

120

MHz

Collector output capacitance

Cob

VCB=-10V,IE=0,f=1MHz

30

pF

CLASSIFICATION OF

hFE

Rank

O

Y

Range

80-160

120-240

Marking

DO

DY

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

2SA1 201

Ｄａｔｅ：２０１１／０５

１　

Ｄａｔｅ：２０１１／０５

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2SA1201 Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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