2SC2881 datasheet(1/1 Pages) HTSEMI

Part #	2SC2881

Description	TRANSISTOR (NPN)

PDF	1 Pages

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

TRANSISTOR (NPN)

FEATURES

Small Flat Package

High Transition Frequency

High Voltage

Complementary to 2SA1201

APPLICATIONS

Power Amplifier and Voltage Amplifier

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=1mA,IE=0

120

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA,IB=0

120

V

Emitter-base breakdown voltage

V(BR)EBO

IE=1mA,IC=0

5

V

Collector cut-off current

ICBO

VCB=120V,IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

µA

DC current gain

hFE

VCE=5V, IC=100mA

80

240

Collector-emitter saturation voltage

VCE(sat)

IC=500mA,IB=50mA

1

V

Base-emitter voltage

VBE

VCE=5V, IC=0.5A

1

V

Transition frequency

fT

VCE=5V,IC=100mA

120

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

30

pF

CLASSIFICATION OF hFE

RANK

O

Y

RANGE

80–160

120–240

MARKING

CO1

CY1

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

800

mA

PC

Collector Power Dissipation

500

mW

RθJA

Thermal Resistance From Junction To Ambient

250

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

１　

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2SC2881

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2SC2881 Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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