2SC4548 datasheet(1/1 Pages) HTSEMI

Part #	2SC4548

Description	TRANSISTOR(NPN)

PDF	1 Pages

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

TRANSISTOR(NPN)

FEATURES

Small Flat Package

High Breakdown Voltage

Excellent hFE Linearity

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=10µA,IE=0

400

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

400

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10µA,IC=0

5

V

Collector cut-off current

ICBO

VCB=300V,IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=4V,IC=0

0.1

µA

DC current gain

hFE

VCE=10V, IC=50mA

60

200

Collector-emitter saturation voltage

VCE(sat)

IC=50mA,IB=5mA

0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=50mA,IB=5mA

1

V

Transition frequency

fT

VCE=30V,IC=10mA

70

MHz

Collector output capacitance

Cob

VCB=30V, IE=0, f=1MHz

4

pF

CLASSIFICATION OF hFE

RANK

D

E

RANGE

60–120

100–200

MARKING

CN

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

400

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

200

mA

PC

Collector Power Dissipation

500

mW

RθJA

Thermal Resistance From Junction To Ambient

250

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

１　

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2SC4548

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2SC4548 Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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