2SC5345 datasheet(1/2 Pages) HTSEMI

Part #	2SC5345

Description	TRANSISTOR (NPN)

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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TRANSISTOR (NPN)

FEATURES

RF amplifier

High current transition frequency fT=550MHz(Typ.),

[VCE=6V, IE=-1mA]

Low output capacitance :

Cob=1.4pF(Typ.) [VCB=6V, IE=0]

Low base time constant and high gain

Excellent noise response

Marking: 5345

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

4

V

IC

Collector Current

20

mA

PC

Collector Power dissipation

300

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL

CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=10μA, IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=5mA, IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10μA, IC=0

4

V

Collector cut-off current

ICBO

VCB=30V, IE=0

0.5

μA

Emitter cut-off current

IEBO

VEB=4V, IC=0

0.5

μA

DC current gain

hFE

VCE=6V, IC=1mA

40

240

Collector-emitter saturation voltage

VCE(sat)

IC=10mA, IB=1mA

0.3

V

Transition frequency

fT

VCE=6V, IC=1mA

550

MHz

Collector output capacitance

Cob

VCB=6V, IE=0, f=1MHz

1.4

pF

CLASSIFICATION OF

hFE

Rank

R

O

Y

Range

40-80

70-140

120-240

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

１　

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2SC5345

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2SC5345 Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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