BAS16V datasheet(1/2 Pages) HTSEMI

Part #	BAS16V

Description	SWITCHING DIODE

PDF	2 Pages

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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BAS16V

SWITCHING DIODE

FEATURES

Fast Switching Speed

For General Purpose Switching Applications

High Conductance

Marking: KAM

Maximum Ratings @TA=25

℃

Parameter

Symbol

Limits

Unit

Non-Repetitive Peak reverse voltage

VRM

100

V

Peak Repetitive Peak reverse voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

VR

75

V

RMS Reverse Voltage

VR(RMS)

53

V

Forward Continuous Current

IFM

300

mA

Average Rectified Output Current

IO

200

mA

Peak forward surge current @=1.0μs

@=1.0s

IFSM

2.0

1.0

A

Power Dissipation

PD

150

mW

Thermal Resistance Junction to Ambient

RθJA

833

K/W

Junction temperature

Tj

150

℃

Storage temperature

TSTG

-65~+150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Reverse breakdown voltage

V(BR) R

IR= 100µA

75

V

Reverse voltage leakage current

IR

VR=75V

VR=20V

1

25

µA

nA

Forward voltage

VF

IF=1mA

IF=10mA

IF=50mA

IF=150mA

0.715

0.855

1

1.25

V

Diode capacitance

CD

VR=0, f=1MHz

2

pF

Reveres recovery time

trr

IF=IR=10mA,Irr=0.1×IR,

RL=100Ω

4

nS

1

SOT-563

www.htsemi.com

semiconductor

JinYu

1

Date:2011/ 05

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BAS16V Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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