BFS20 datasheet(1/1 Pages) HTSEMI

Part #	BFS20

Description	TRANSISTOR (NPN)

PDF	1 Pages

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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FEATURES

 Very Low Feedback Capacitance

 Low Current

 Low Voltage

APPLICATIONS

 IF and VHF Applications in Thick and Thin-Film Circuits

MARKING:G11

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

4

V

IC

Collector Current

25

mA

PC

Collector Power Dissipation

250

mW

RΘJA

Thermal Resistance From Junction To Ambient

500

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100µA, IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=0.1mA, IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA, IC=0

4

V

Collector cut-off current

ICBO

VCB=20V, IE=0

0.1

µA

Collector cut-off current

ICEO

VCE=15V, IB=0

0.1

µA

Emitter cut-off current

IEBO

VEB=4V, IC=0

0.1

µA

DC current gain

hFE

VCE=10V, IC=7mA

40

120

Collector-emitter saturation voltage

VCE(sat)

IC=10mA, IB=1mA

0.3

V

Base-emitter voltage

VBE

VCE=10V, IC=7mA

0.9

V

Transition frequency

fT

VCE=10V,IC=5mA, f=100MHz

275

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

1

pF

1. BASE

2. EMITTER

3. COLLECTOR

SOT–23

BFS20

TRANSISTOR (NPN)

１　

Ｄａｔｅ：２０１１／０５

www.htsemi.com

semiconductor

JinYu

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