BST40 datasheet(1/1 Pages) HTSEMI

Part #	BST40

Description	TRANSISTOR (NPN)

PDF	1 Pages

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

FEATURES

Low Current

High Voltage

APPLICATIONS

General Purpose Switching and Amplification

MARKING:BCT39:AT1

BCT40:AT2

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

BST39

400

Collector-base breakdown voltage

V(BR)CBO

IC=100µA,IE=0

BST40

300

V

BST39

350

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

BST40

250

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100µA,IC=0

5

V

Collector cut-off current

ICBO

VCB=300V,IE=0

20

nA

Emitter cut-off current

IEBO

VEB=5V,IC=0

100

nA

DC current gain

hFE

VCE=10V, IC=20mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=50mA,IB=4mA

0.5

V

Transition frequency

fT

VCE=10V,IC=10mA, f=100MHz

70

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

2

pF

Symbol

Parameter

Value

Unit

BST39

400

VCBO

Collector-Base Voltage

BST40

300

V

BST39

350

VCEO

Collector-Emitter Voltage

BST40

250

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

100

mA

PC

Collector Power Dissipation

500

mW

RθJA

Thermal Resistance From Junction To Ambient

250

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

BST39,BST40

TRANSISTOR (NPN)

１　

Ｄａｔｅ：２０１１／０５

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BST40 Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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