EMB3 datasheet(1/1 Pages) HTSEMI

Part #	EMB3

Description	DIGITAL TRANSISTOR (PNP PNP)

PDF	1 Pages

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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EMB3

DIGITAL TRANSISTOR (PNP+ PNP)

FEATURES

Two DTA143T chips in a package

Transistor elements are independent, eliminating interference.

Mounting cost and area can be cut in half.

External circuit

MARKING: B3

Absolute maximum ratings(Ta=25

℃)

Parameter

Symbol

Limits

Unit

Collector-base

voltage

V(BR)CBO

-50

V

Collector-emitter voltage

V(BR)CEO

-50

V

Emitter-base

voltage

V(BR)EBO

-5

V

Collector current

IC

-100

mA

Collector Power dissipation

PC

150

mW

Junction temperature

Tj

150

Storage temperature

Tstg

-55~150

Electrical characteristics (Ta=25

℃)

Parameter

Symbol

Min.

Typ

Max.

Unit

Conditions

Collector-base breakdown voltage

V(BR)CBO

-50

V

IC=-50μA

Collector-emitter breakdown voltage

V(BR)CEO

-50

V

IC=-1mA

Emitter-base breakdown voltage

V(BR)EBO

-5

V

IE=-50μA

Collector cut-off current

ICBO

-0.5

μAVCB=-50V

Emitter cut-off current

IEBO

-0.5

μAVEB=-4V

Collector-emitter saturation voltage

VCE(sat)

-0.3

V

IC=-5mA,IB=-2.5mA

DC current transfer ratio

hFE

100

600

VCE=-5V,IC=-1mA

Input resistance

R1

3.29

4.7

6.11

KΩ

Transition frequency

fT

250

MHz

VCE=10V ,IE=-5mA,f=100MHz

SOT-563

1

℃

www.htsemi.com

semiconductor

JinYu

1

Date:2011/ 05

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EMB3 Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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