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KTC3876 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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KTC3876 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() KTC3876 0.5A , 35V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 15-Jul-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 2 Emitter Collector 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE High hFE Complementary to KTA1505 CLASSIFICATION OF hFE Product-Rank KTC3876-O KTC3876-Y KTC3876-GR Range 70~140 120~240 200~400 Marking Code WO WY WG PACKAGE INFORMATION Package MPQ Leader Size SOT-23 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 35 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 500 mA Collector Power Dissipation PC 200 mW Junction, Storage Temperature TJ, TSTG 150, -55 ~ 150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 35 - - V IC=100µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V IE=100µA, IC=0 Collector Cut-Off Current ICBO - - 0.1 µ A VCB=35V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 µ A VEB=5V, IC=0 DC Current Gain hFE(1) 70 - 400 VCE=1V, IC=100mA hFE(2) 25 VCE=6V, IC=400mA O 40 Y Collector to Emitter Saturation Voltage VCE(sat) - - 0.25 V IC=100mA, IB=10mA Base to Emitter Saturation Voltage VBE - - 1 V IB=100mA, VCE=1V Transition Frequency fT - 300 - MHz VCE=6V, IC=20mA Collector output capacitance Cob - 7 - pF VCB=6V, IE=0, f=1MHZ SOT-23 Top View A L C B D G H J F K E 1 2 3 1 2 3 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 |
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