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MMBTA56 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMBTA56 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page ![]() MMBTA56 -0.5A , -80V PNP Plastic Encapsulated Transistor Elektronische Bauelemente 11-Jul-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H J F K E 1 2 3 1 2 3 1 Base 2 Emitter Collector 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES General Purpose Amplifier Applications MARKING PACKAGE INFORMATION MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector - Base Voltage VCBO -80 V Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage VEBO -4 V Collector Current - Continuous IC -500 mA Collector Power Dissipation PC 225 mW Thermal Resistance From Junction To Ambient RθJA 555 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage V(BR)CBO -80 - - V IC= -100µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO -80 - - V IC= -1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO -4 - - V IE= -100µA, IC=0 Collector Cut-Off Current ICBO - - -0.1 µA VCB= -80V, IE=0 Collector Cut-Off Current ICEO - - -0.1 µA VCE= -60V, IB=0 Emitter Cut-Off Current IEBO - - -0.1 µA VEB= -4V, IC=0 DC Current Gain hFE1 100 - 400 VCE= -1V, IC= -10mA hFE2 100 - - VCE= -1V, IC= -100mA Collector-Emitter Saturation Voltage VCE(sat) - - -0.25 V IC= -100mA, IB = -10mA Base-Emitter Saturation Voltage VBE - - -1.2 V VCE= -1V, IC= -100mA Transition frequency fT 50 - - MHz VCE= -1V,IC= -100mA, f=100MHz 2GM Package MPQ Leader Size SOT-23 3K 7’ inch SOT-23 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 |
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