SDN520C datasheet(2/2 Pages) SECOS

2 / 2 page

SDN520C

N-Ch: 4.5 A, 20 V, RDS(ON) 58 mΩ

Ω

P-Ch: -4.5 A, -20 V, RDS(ON) 112 mΩ

Ω

N & P-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

4-Jul-2011 Rev. A

Page 2 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Gate-Threshold Voltage

N-Ch

VGS(th)

VDS=VGS, ID=250uA

P-Ch

-1

VDS=VGS, ID= -250uA

Gate-Body Leakage Current

N-Ch

IGSS

100

VDS= 0 , VGS= 8 V

P-Ch

-100

VDS= 0 , VGS= -8 V

Zero Gate Voltage Drain Current

N-Ch

IDSS

VDS=16 V, VGS=0

P-Ch

-1

VDS=-16V, VGS=0

N-Ch

VDS=16V, VGS=0 , TJ=55℃

P-Ch

-10

VDS= -16V, VGS=0 , TJ=55℃

On-State Drain Current

N-Ch

ID(on)

VDS = 5V, VGS=4.5 V

P-Ch

-5

VDS = -5V, VGS= -4.5 V

Drain-Source On-Resistance

N-Ch

RDS(ON)

VGS=4.5V, ID= 1A

P-Ch

112

VGS=-4.5V, ID= 1A

N-Ch

VGS=2.5V, ID= A

P-Ch

172

VGS=-2.5V, ID= -1A

Forward Transconductance

N-Ch

gfs

VDS= 5V, ID= 1A

P-Ch

VDS= -5V, ID= 11A

Diode Forward Voltage

N-Ch

VSD

0.80

IS= 1.05A, VGS= 0

P-Ch

-0.83

IS= -1.05A, VGS= 0

Dynamic

Total Gate Charge

N-Ch

7.5

N-Channel

VDS=15V, VGS= 4.5V,

ID= 2.7A

P-Channel

VDS= -15V, VGS= -4.5V,

ID= -3.1A

P-Ch

3.8

Gate-Source Charge

N-Ch

Qgs

0.6

P-Ch

0.6

Gate-Drain Charge

N-Ch

Qgd

1.0

P-Ch

1.5

Turn-on Delay Time

N-Ch

Td(on)

N-Channel

VDD= 15V, RGEN= 15 ,

VGS= 4.5V, ID= 1A

P-Channel

VDD= -15V, RGEN= 15

VGS= -4.5V, ID= -1A

P-Ch

Rise Time

N-Ch

P-Ch

Turn-off Delay Time

N-Ch

Td(off)

P-Ch

Fall Time

N-Ch

P-Ch

Notes:

Pulse test: PW <= 300us duty cycle <= 2%.

Guaranteed by design, not subject to production testing.

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