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SE33G Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SE33G Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() SE33G~SE35G Voltage 200V ~ 600V 3.0 Amp Super Fast Recovery Rectifier Elektronische Bauelemente 15-Jul-2011 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C B A D REF. Millimeter Min. Max. A 25.4 (TYP) B 7.20 9.50 C 4.80 5.60 D 1.10 1.30 RoHS Compliant Product A suffix of “-C” specifies and halogen free FEATURES Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability MECHANICAL DATA Case:Molded plastic DO-27 Epoxy:UL 94V-0 rate flame retardant Terminals:Solderable per MIL-STD-202 method 208 Polarity:Color band denotes cathode Mounting position:Any Weight:1.1 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, de-rate current by 20%.) Parameter Symbol Part Number Unit SE33G SE34G SE35G Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V Maximum RMS Voltage VRMS 140 280 480 V Maximum DC Blocking Voltage VDC 200 400 600 V Maximum Average Forward Rectified Current TL=55°C IF(AV) 3.0 A Peak Forward Surge Current,8.3ms single Half sine-wave superimposed on rated load (JEDEC method) IFSM 125 A Maximum Instantaneous Forward Voltage @ 3.0A VF 0.92 1.25 1.7 V Maximum DC Reverse Current At Rated DC Blocking Voltage TJ=25°C IR 5.0 µA TJ=125°C 150 Maximum Reverse Recovery Time 1 TRR 15 25 nS Typical Junction Capacitance 2 CJ 60 pF Typical Thermal Resistance 3 RθJC 50 °C W Operating Junction and Storage Temperature Range TJ, TSTG -55~150 °C Notes: 1. Reverse recovery test conditions IF= 0.5A, IR= 1.0A, IRR= 0.25A. 2. Thermal Resistance junction to lead. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. DO-27 |
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