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SSG4502CE Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SSG4502CE
Description  N & P-Ch Enhancement Mode Power MOSFET N-Ch: 10.0 A, 30 V, RDS(ON) 16 m P-Ch: -8.5A, -30 V, RDS(ON) 23 m
PDF  7 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG4502CE Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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SSG4502CE
N & P-Ch Enhancement Mode Power MOSFET
N-Ch: 10.0 A, 30 V, RDS(ON) 16 mΩ
Ω
Ω
Ω
P-Ch: -8.5A, -30 V, RDS(ON) 23 mΩ
Ω
Ω
Ω
Elektronische Bauelemente
26-Dec-2011 Rev. A
Page 2 of 7
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
N-CHANNEL ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
Drain-Source Breakdown Voltage
V(BR)DSS
30
-
-
V
VGS=0, ID=250µA
Gate Threshold Voltage
VGS(th)
1
-
-
V
VDS=VGS, ID=250µA
Gate-Source Leakage Current
IGSS
-
-
±10
nA
VGS= 20V, VDS=0
Drain-Source Leakage Current
IDSS
-
-
1
µA
VDS=24V, VGS=0
On-State Drain Current
1
ID(ON)
-
-
20
A
VDS=5V, VGS=10V
Static Drain-Source On-Resistance
1
RDS(ON)
-
-
16
m
VGS=10V, ID=10A
-
-
20
VGS=4.5V, ID=8.4A
Forward Transconductance
1
gfs
-
40
-
S
VDS=15V, ID=10A
Pulsed Source Current (Body Diode)
1
ISM
-
5
-
A
Dynamic
Total Gate Charge
Qg
-
12
nC
ID=10A
VDS=15V
VGS=4.5V
Gate-Source Charge
Qgs
-
3.3
-
Gate-Drain (“Miller”) Change
Qgd
-
4.5
-
Turn-on Delay Time
Td(on)
-
20
-
nS
VDD=15V
VGS=10V
ID=1A
RGEN=25
Rise Time
Tr
-
9
-
Turn-off Delay Time
Td(off)
-
70
-
Fall Time
Tf
-
20
-
Notes:
1. Pulse test: PW ≦ 300us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.



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