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SSG4842N Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SSG4842N
Description  23A , 40V , RDS(ON) 9 m N-Ch Enhancement Mode Power MOSFET
PDF  2 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSG4842N Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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SSG4842N
23A , 40V , RDS(ON) 9 mΩ
Ω
Ω
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
13-Dec-2011 Rev. A
Page 2 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Gate Threshold Voltage
VGS(th)
1
-
-
V
VDS=VGS, ID=250µA
Gate-Body Leakage
IGSS
-
-
100
nA
VDS=0, VGS=20V
Zero Gate Voltage Drain Current
IDSS
-
-
1
µA
VDS=24V, VGS=0
-
-
5
VDS=24V, VGS=0, TJ=55°C
On-State Drain Current
1
ID(on)
30
-
-
A
VDS=5V, VGS=10V
Drain-Source On-Resistance
1
RDS(ON)
-
-
9
m
VGS=10V, ID=23A
-
-
12
VGS=4.5V, ID=20A
Forward Transconductance
1
gfs
-
90
-
S
VDS=15V, ID=23A
Diode Forward Voltage
VSD
-
0.7
-
V
IS=2.3A, VGS=0
Dynamic
2
Total Gate Charge
Qg
-
25
-
nC
ID=23A
VDS=15V
VGS=4.5V
Gate-Source Charge
Qgs
-
6
-
Gate-Drain Charge
Qgd
-
9
-
Turn-On Delay Time
Td(on)
-
20
-
nS
VDD=15V
ID=1A
VGEN=10V
RL=6
Rise Time
Tr
-
13
-
Turn-Off Delay Time
Td(off)
-
82
-
Fall Time
Tf
-
43
-
Notes:
1.
Pulse test：PW≦300µs duty cycle≦2%.
2.
Guaranteed by design, not subject to production testing.



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