STT4443 datasheet(2/4 Pages) SECOS

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Any changes of specification will not be informed individually.

Elektronische Bauelemente

STT4443

-2.3A , -30V , RDS(ON) 120 m

P-Channel Enhancement Mode MOSFET

02-Dec-2011 Rev. B

Page 2 of 4

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

BVDSS

-30

VGS=0, ID= -250uA

Gate-Threshold Voltage

VGS(th)

-1

-2.5

VDS=VGS, ID= -250uA

Gate-Body Leakage Current

IGSS

±100

VGS=±20V

-1

VDS= -30V, VGS=0

Drain-Source Leakage Current

IDSS

-25

μA

VDS= -24V, VGS=0

120

VGS= -10V, ID= -2A

Drain-Source On-Resistance

RDS(ON)

170

mΩ

VGS= -4.5V, ID= -1A

Forward Transconductance

gfs

VDS= -5V, ID= -2A

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

0.78

Gate-Drain Charge

Qgd

1.6

VDS= -25V,

VGS= -4.5V,

ID= -2A

Turn-on Delay Time

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

7.5

VDS= -15V,

VGS= -5V,

RG=3.3Ω,

RD=15Ω,

ID= -1A

Input Capacitance

Ciss

260

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VGS=0,

VDS= -25V,

f=1.0MHz

Reverse Transfer Capacitance

4.3

Ω

f=1.0MHz

Source-Drain Diode

Diode Forward Voltage

VSD

-1.2

IS= -0.9A, VGS=0

Reverse Recovery Time

TRR

Reverse Recovery Charge

QRR

IS= -2A, VGS=0

dI/dt=100A/μs

Notes:

1. Pulse width limited by Max. junction temperature.

2. Pulse test

3. Surface mounted on 1 in

2 copper pad of FR4 board, t≦5sec; 180°C/W when mounted on Min. copper pad.

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