STT6802 datasheet(1/4 Pages) SECOS

Part #	STT6802

Description	3.3A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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STT6802

3.3A , 30V , RDS(ON) 65 mΩ

Ω

N-Channel Enhancement Mode MOSFET

Elektronische Bauelemente

15-Aug-2011 Rev. A

Page 1 of 4

6802

TOP VIEW

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

STT6802 utilized advanced processing techniques

to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device. The TSOP-6

package is universally used for all commercial-industrial

applications.

FEATURES

Simple Drive Requirement

Smaller Outline Package

Surface mount package

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

TSOP-6

3K

7 inch

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

3

TA=25°C

ID

3.3

A

TA=70°C

2.6

Pulsed Drain Current

1

IDM

10

A

Power Dissipation

TA=25°C

P D

1.14

W

Linear Derating Factor

0.01

W / °C

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Rating

Maximum Junction to Ambient

3

RθJA

110

°C / W

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

2.70

3.10

G

0

0.10

B

2.60

3.00

H

0.60 REF.

C

1.40

1.80

J

0.12 REF.

D

1.10 MAX.

K

0°

10°

E

1.90 REF.

L

0.95 REF.

F

0.30

0.50

TSOP-6

B

L

F

H

C

J

D G

K

A

E

1

2

3

4

5

6

Date Code

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