SD103AX datasheet(1/1 Pages) HTSEMI

Part #	SD103AX

Description	SCHOTTKY BARRIER DIODE

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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SCHOTTKY BARRIER DIODE

FEATURES



Low Forward Voltage Drop



Guard Ring Construction for Transient Protection



Low Reverse Recovery Time



Low Reverse Capacitance

MARKING: S

___

4

MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )

Symbol

Parameter

Value

Unit

VRRM

Peak Repetitive Reverse Voltage

VRWM

Working Peak Reverse Voltage

VR

DC Blocking Voltage

40

V

VR(RMS)

RMS Reverse Voltage

28

V

IO

Forward Continuous Current

350

mA

IFRM

Repetitive Peak Forward Current @t≤1s

1

IFSM

Non-Repetitive Peak Forward Surge Current@8.3ms Half Sine Wave

15

A

PD

Power Dissipation

150

mW

RΘJA

Thermal Resistance From Junction To Ambient

667

℃/W

Tj

Junction Temperature

125

℃

Tstg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Reverse voltage

V(BR)

IR=100μA

40

V

VR=30V

5

VR=20V

2

Reverse current

IR

VR=10V

1

μA

IF=1mA

0.27

IF=5mA

0.32

IF=20mA

0.37

Forward voltage

VF

IF=200mA

0.6

V

Total capacitance

Ctot

VR=0V,f=1MHz

50

pF

Reverse recovery time

trr

IF= IR=200mA, Irr=0.1×IR, RL=100Ω

10

ns

SOD-523

SD103AX

１　

Ｄａｔｅ：２０１１／０５

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SD103AX Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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