2SA733

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The 2SA733 is designed for use in driver stage of AF amplifier

applications..

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................... -55~+150

°C

Junction Temperature ..................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................ 250 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 60 V

VCEO Collector to Emitter Voltage ...................................................................................... 50 V

VEBO Emitter to Base Voltage .............................................................................................. 5 V

IC Collector Current ....................................................................................................... 100 mA

IB Base Current ............................................................................................................... 20 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

60

-

-

V

IC=100uA, IE=0

BVCEO

50

-

-

V

IC=1mA, IB=0

BVEBO

5

-

-

V

IE=10uA, IC=0

ICBO

-

-

0.1

uA

VCB=60V, IE=0

IEBO

-

-

0.1

uA

VEB=5V, IC=0

VCE(sat)

-

0.18

0.3

V

IC=100mA, IB=10mA

VBE(on)

0.55

0.62

0.7

V

VCE=6V, IC=1mA

hFE

90

200

600

VCE=6V, IC=1mA

fT

100

180

-

MHz

VCE=6V, IC=10mA

Cob

-

4.5

6

pF

VCB=10V, f=1MHz, IE=0

Classification Of hFE1

Rank

R

Q

P

K

Range

90-180

135-270

200-400

300-600

TIGER ELECTRONIC CO.,LTD

TIGER ELECTRONIC CO.,LTD