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BAS16WS-V Datasheet(PDF) 2 Page - Vishay Siliconix

Part # BAS16WS-V
Description  Small Signal Fast Switching Diode
PDF  4 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BAS16WS-V Datasheet(HTML) 2 Page - Vishay Siliconix

  BAS16WS-V Datasheet HTML 1Page - Vishay Siliconix BAS16WS-V Datasheet HTML 2Page - Vishay Siliconix BAS16WS-V Datasheet HTML 3Page - Vishay Siliconix BAS16WS-V Datasheet HTML 4Page - Vishay Siliconix  
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Document Number 85752
Rev. 1.7, 12-Aug-10
BAS16WS-V
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
IF = 1 mA
VF
715
mV
IF = 10 mA
VF
855
mV
IF = 50 mA
VF
1000
mV
IF = 150 mA
VF
1250
mV
Leakage current
VR = 25 V, TJ = 150 °C
IR
30
µA
VR = 75 V
IR
1µA
VR = 75 V, TJ = 150 °C
IR
50
µA
Diode capacitance
VR = 0; f = 1 MHz
CD
2pF
Reverse recovery time
IF = 10 mA to IR = 10 mA,
IR = 1 mA, RL = 100 Ω
trr
6ns
Figure 1. Forward Characteristics
Figure 2. Dynamic Forward Resistance vs. Forward Current
18105
VF (V)
T
j = 100 °C
T
j = 25 °C
10- 2
10- 1
102
103
1
10
12
0
17438
f = 1 kHz
T
j = 25 °C
IF (mA)
10
102
103
104
10-2
10-1
1102
10
2
5
2
5
2
5
2
5
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Figure 4. Relative Capacitance vs. Reverse Voltage
18185
Tamb (°C)
0
100
400
500
200
300
100
200
0
17440
VR (V)
0.7
0.8
0.9
1.0
1.1
f = 1 MHz
T
j = 25 °C
2
0
8
6
410



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