BAY80 datasheet(2/4 Pages) VISHAY

2 / 4 page

BAY80

www.vishay.com

Vishay Semiconductors

Rev. 1.9, 16-Jul-12

Document Number: 85553

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Reverse Current vs. Junction Temperature

Fig. 2 - Forward Current vs. Forward Voltage

Fig. 3 - Differential Forward Resistance vs. Forward Current

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 0.1 mA

400

520

IF = 10 mA

630

780

IF = 50 mA

730

920

IF = 100 mA

780

1000

IF = 150 mA

1070

Reverse current

VR = 120 V

100

VR = 120 V, Tj = 150 °C

100

μA

Breakdown voltage

IR = 100 μA, tp/T = 0.01,

tp = 0.3 ms

V(BR)

150

Diode capacitance

VR = 0 V, f = 1 MHz

1.5

Differential forward resistance

IF = 10 mA



Reverse recovery time

IF = IR = 30 mA, iR = 3 mA,

RL = 100 

trr

120

160

0.01

0.1

1000

Tj -Junction Temperature (°C)

200

94 9084

100

Scattering Limit

R = VRRM

0.4

0.8

1.2

1.6

0.1

100

1000

VF -Forward Voltage (V)

2.0

94 9085

Scattering Limit

j = 25 °C

0.1

100

1000

IF - Forward Current (mA)

100

94 9089

j = 25 °C

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