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MCL4154 Datasheet(PDF) 1 Page - Vishay Siliconix |
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MCL4154 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() MCL4154 www.vishay.com Vishay Semiconductors Rev. 1.9, 01-Aug-12 1 Document Number: 85568 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Fast Switching Diode MECHANICAL DATA Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes/options: TR3/10K per 13" reel (8 mm tape), 10K/box TR/2.5K per 7" reel (8 mm tape), 12.5K/box FEATURES • Silicon epitaxial planar diode • Electrical data identical with the device 1N4154 • MicroMELF package • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Extreme fast switches PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE INTERNAL CONSTRUCTION REMARKS MCL4154 VRRM = 35 V MCL4154-TR3 or MCL4154-TR Single diode Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage VRRM 35 V Reverse voltage VR 25 V Peak forward surge current tp = 1 μs IFSM 2A Repetitive peak forward current IFRM 450 mA Forward continuous current IF 200 mA Average forward current VR = 0 IFAV 150 mA Power dissipation Ptot 500 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air Mounted on epoxy-glass hard tissue, Fig. 4, 35 μm copper clad, 0.9 mm2 copper area per electrode RthJA 500 K/W Junction temperature Tj 175 °C Storage temperature range Tstg - 65 to + 175 °C |
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Similar Description - MCL4154 |
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