2N6520

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The 2N6520 is designed for general purpose applications requiring high

breakdown voltages.

Features

• High Collector-Emitter Breakdown Voltage.

• Low Collector-Emitter Saturation Voltage.

• The 2N6520 is complementary to 2N6517.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................................... -55~+150

°C

Junction Temperature ................................................................................................. +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C)............................................................................................. 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage.................................................................................................... 350 V

VCEO Collector to Emitter Voltage................................................................................................. 350 V

VEBO Emitter to Base Voltage........................................................................................................... 5 V

IC Collector Current ................................................................................................................... 500 mA

IB Base Current ......................................................................................................................... 250 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

350

-

-

V

IC=100uA, IE=0

BVCEO

350

-

-

V

IC=1mA, IB=0

BVEBO

5

-

-

V

IE=10uA, IC=0

ICBO

-

-

50

nA

VCB=250V, IE=0

IEBO

-

-

50

nA

VEB=4V, IC=0

VCE(SAT)1

-

-

0.30

V

IC=10mA IB=1mA

VCE(SAT)2

-

-

0.35

V

IC=20mA IB=2mA

VCE(SAT)3

-

-

0.50

V

IC=30mA IB=3mA

VCE(SAT)4

-

-

1.00

V

IC=50mA IB=5mA

VBE(ON)

-

-

2

V

IC=100mA VCE=10V

VBE(SAT)1

-

-

0.75

V

IC=10mA IB=1mA

VBE(SAT)2

-

-

0.85

V

IC=20mA IB=2mA

VBE(SAT)3

-

-

0.90

V

IC=30mA IB=3mA

hFE1

20

-

-

VCE=10V IC=1mA

hFE2

30

-

-

VCE=10V IC=10mA

hFE3

30

-

200

VCE=10V IC=30mA

hFE4

20

-

200

VCE=10V IC=50mA

hFE5

15

-

-

VCE=10V IC=100mA

fT

40

-

200

MHz

IC=10mA VCE=20V f=20MHz

Cob

-

-

6

pF

VCB=20V f=1MHz IE=0

TIGER ELECTRONIC CO.,LTD

TIGER ELECTRONIC CO.,LTD