2SC945 datasheet(1/1 Pages) TGS

Part #	2SC945

Description	TO-92 Plastic-Encapsulate Transistors (NPN)

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Manufacturer	TGS [Tiger Electronic Co.,Ltd]

Direct Link	http://www.tgselec.com

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TO-92

Plastic-Encapsulate Transistors

2SC945

TRANSISTOR (NPN )

FEATURE

Excellent hFE linearity

Low noise

Complementary to A733

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

150

mA

PC

Collector Power Dissipation

400

mW

TJ

Junction Temperature

125

℃

Tstg

Storage Temperature

-55-125

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=1mA , IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=100 A , IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100 A, IC=0

5

V

Collector cut-off current

ICBO

VCB=60V, IE=0

0.1

Collector cut-off current

ICEO

VCE=45V

0.1

Emitter cut-off current

IEBO

VEB=5V ,IC=0

0.1

hFE(1)

VCE=6V , IC=1mA

70

700

DC current gain

hFE(2)

VCE=6V , IC=0.1mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=100mA, IB=10mA

0.3

V

Base-emitter saturation voltage

VBE(sat)

IC=100mA, IB=10mA

1

V

Transition frequency

fT

VCE=6V,IC=10mA,f=30MHz

200

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

3.0

pF

Noise figure

NF

VCE

=6V,IC=0.1mA

RG

=10kΩ,f=1MHz

10

dB

CLASSIFICATION OF hFE(1)

Rank

O

Y

GR

BL

Range

70-140

120-240

200-400

350-700

TO-92

1.EMITTER

2.COLLECTOR

3. BASE

μA

A,Jan,2011

μ

, IB=0

TIGER ELECTRONIC CO.,LTD

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