Parameter

Symbol

Max

Unit

Repetitive peak off-state

voltages

V

DRM

V

RRM

400

V

Average on-state current

I

T(AV)

2.5

A

RMS on-state current

I

T(RMS)

4.0

A

Non-repetitive peak

on-state current

I

TSM

38

A

Max. Operating Junction

Temperature

T

j

110

Storage Temperature

T

stg

-45~150

C106M

GENERAL DESCRIPTION

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Repetitive peak off-state voltages

V

DRM

V

RRM

400

V

Average on-state current

I

T(AV)

half sine wave; T

2.5

A

RMS on-state current

I

T(RMS)

all conduction angles

4.0

A

On-state voltage

V

T

I

1.23

1.8

V

Holding current

I

H

V

0.1

6.0

mA

Latching current

I

L

V

0.17

10

mA

Gate trigger current

I

GT

V

15

200

uA

Gate trigger voltage

V

GT

V

0.4

1.5

V

Thyristors logic level

Passivated, sensitive gate thyristor in a plastic envelope,

intended for use in general purpose switching and phase

control applications. This device is intended to be

interfaced directly to microcontrollers, logic integrated

circuits and other low power gate trigger circuits

Product specification

TO-126

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

( Ta = 25 C)

O

( Ta = 25 C)

O

TIGER ELECTRONIC CO.,LTD