KBP005M thru KBP10M, 3N246 thru 3N252

Vishay General Semiconductor

Document Number: 88531

Revision: 15-Apr-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

3

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Typical Forward Characteristics Per Diode

Figure 4. Typical Reverse Leakage Characteristics Per Diode

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.01

0.1

1

10

100

Instantaneous Forward Voltage (V)

T

Pulse Width = 300 µs

1 % Duty Cycle

0

0.01

0.1

1

10

60

80

100

20

40

Percent of Rated Peak Reverse Voltage (%)

T

T

T

Figure 5. Typical Junction Capacitance Per Diode

1

0.1

10

100

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

Polarity shown on front side of case: positive lead by beveled corner

0.125 x 45°

(3.2)

0.600 (15.24)

0.560 (14.22)

0.034 (0.86)

0.028 (0.76)

0.105 (2.67)

0.085 (2.16)

0.160 (4.1)

0.140 (3.6)

0.060

(1.52)

0.460 (11.68)

0.50 (12.7) MIN.

0.420 (10.67)

0.500 (12.70)

0.460 (11.68)

0.60

(15.2)

MIN.

DIA.

0.200 (5.08)

0.180 (4.57)

Case Style KBPM