MBR340 datasheet(2/6 Pages) VISHAY

2 / 6 page

VS-MBR340, VS-MBR340-M3

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Vishay Semiconductors

Revision: 19-Sep-11

Document Number: 93449

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Note

(1) Pulse width < 300 μs, duty cycle < 2 %

Notes

(1)

thermal runaway condition for a diode on its own heatsink

(2) Mounted 1" square PCB, thermal probe connected to lead 2 mm from package

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum forward voltage drop

See fig. 1

VFM (1)

1.0 A

TJ = 25 °C

0.5

3.0 A

0.6

9.4 A

0.85

1.0 A

TJ = 125 °C

0.37

3.0 A

0.49

9.4 A

0.72

Maximum reverse leakage current

See fig. 2

IRM (1)

TJ = 25 °C

VR = Rated VR

0.6

TJ = 100 °C

TJ = 125 °C

Typical junction capacitance

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

190

Typical series inductance

Measured lead to lead 5 mm from package body

9.0

Maximum voltage rate of change

dV/dt

Rated VR

10 000

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

TJ (1), TStg

- 40 to 150

°C

Maximum thermal resistance,

junction to lead

RthJL (2)

DC operation

See fig. 4

°C/W

Approximate weight

1.2

0.042

oz.

Marking device

Case style C-16

MBR340

tot

-------------

thJA

--------------

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