KTC3198 datasheet(1/1 Pages) TGS

Part #	KTC3198

Description	TO-92 Plastic-Encapsulate Transistors (NPN)

PDF	1 Pages

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Manufacturer	TGS [Tiger Electronic Co.,Ltd]

Direct Link	http://www.tgselec.com

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1 / 1 page

A,Dec,2010

TO – 92

1.EMITTER

2.COLLECTOR

3.BASE

TO-92 Plastic-Encapsulate Transistors

KTC3198

TRANSISTOR (NPN)

FEATURES

General Purpose Switching Application

Complementary to KTA1266.

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 0.1mA ,IE=0

60

V

Collector-emitter breakdown voltage

V(BR) CEO

IC=5mA,IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=0.1mA,IC=0

5

V

Collector cut-off current

ICBO

VCB=60V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

hFE(1)

VCE=6V, IC=2mA

70

700

DC current gain

hFE(2)

VCE=6V, IC=150mA

25

Collector-emitter saturation voltage

VCE(sat)

IC=100mA,IB=10mA

0.25

V

Base-emitter saturation voltage

VBE(sat)

IC=100mA,IB=10mA

1

V

Transition frequency

fT

VCE=10V,IC=1mA

80

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

3.5

pF

CLASSIFICATION OF hFE(1)

RANK

O

Y

GR

BL

RANGE

70-140

120-240

200-400

300-700

Symbo

Parameter

Value

Unit

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

0.15

A

PC

Collector Power Dissipation

0.625

W

RθJA

Thermal Resistance From Junction To Ambient

200

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

TIGER ELECTRONIC CO.,LTD

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