KTC3203 datasheet(1/1 Pages) TGS

Part #	KTC3203

Description	TO-92 Plastic-Encapsulate Transistors (NPN)

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Manufacturer	TGS [Tiger Electronic Co.,Ltd]

Direct Link	http://www.tgselec.com

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TO-92 Plastic-Encapsulate Transistors

KTC3203

TRANSISTOR (NPN)

FEATURES

Complementary to KTA1271

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

35

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

800

mA

PC

Collector Power Dissipation

625

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

M

in

T

yp

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC = 0.1mA, IB=0

35

V

Collector-emitter breakdown voltage

V(BR)CEO

IC = 10mA, IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 0.1mA, IC=0

5

V

Collector cut-off current

ICBO

VCB= 35V , IE=0

0.1

μA

Collector cut-off current

ICEO

VCE= 25V , IB=0

0.2

μA

Emitter cut-off current

IEBO

VEB= 5V, IC=0

0.1

μA

hFE(1)

VCE=1V, IC= 100mA

100

320

DC current gain

hFE(2)

VCE=1V, IC= 700mA

35

Collector-emitter saturation voltage

VCE(sat)

IC= 500 mA, IB= 20mA

0.5

V

Base-emitter voltage

VBE

VCE= 1V, IC= 10mA

0.8

V

Transition frequency

f T

VCE= 5 V, IC= 10mA

120

MHz

Collector Output Capacitance

Cob

VCB=10V,IE= 0,f=1MHz

13

pF

CLASSIFICATION OF hFE(1)

Rank

O

Y

Range

100-200

160-320

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

A,June,2011

TIGER ELECTRONIC CO.,LTD

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