10UT10 datasheet(4/7 Pages) VISHAY

4 / 7 page

VS-10UT10, VS-10WT10FN

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Vishay Semiconductors

Revision: 02-Nov-11

Document Number: 94647

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Fig. 7 - Maximum Non-Repetitive Surge Current

Note

(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;

Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);

PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR

Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)

Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)

tp - Square Wave Pulse Duration (µs)

100

1000

10 000

1000

100

110

Rectangular Pulse Duration (µs)

100

J = 25 °C

J = 125 °C

J = 175 °C

100

110

Rectangular Pulse Duration (µs)

100

J = 25 °C

J = 125 °C

J = 175 °C

10UT10 Datasheet(PDF) 4 Page - Vishay Siliconix