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20UT04FN Datasheet(PDF) 4 Page - Vishay Siliconix |
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20UT04FN Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 8 page ![]() VS-20UT04, VS-20WT04FN www.vishay.com Vishay Semiconductors Revision: 03-Nov-11 4 Document Number: 94573 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR IF(AV) - Average Forward Current (A) 20 15 10 525 30 0 160 180 120 140 150 170 130 94573_05 Square wave (D = 0.50) 80 % rated V R applied See note (1) DC IF(AV) - Average Forward Current (A) 20 25 15 10 5 30 0 15 20 0 10 5 94573_06 180° 120° 90° 60° 30° DC RMS limit 100 10 100 tp - Square Wave Pulse Duration (µs) 94573_07 1000 10 000 1000 |
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