BSP135 datasheet(2/7 Pages) SIEMENS

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Semiconductor Group

BSP 135

Electrical Characteristics

j = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain-source breakdown voltage

GS = − 3 V, ID = 0.25 mA

(BR)DSS

600

–

Gate threshold voltage

DS = 3 V, ID = 1 mA

GS(th)

− 1.8

− 1.5

− 0.7

Drain-source cutoff current

DS = 600 V, VGS = − 3 V

= 25 ˚C

= 125 ˚C

DSS

–

100

200

µA

Gate-source leakage current

GS = 20 V, VDS = 0

GSS

–

100

Drain-source on-resistance

GS = 0 V, ID = 0.01 A

DS(on)

–40

Ω

Dynamic Characteristics

Forward transconductance

DS ≥ 2 × ID × RDS(on)max, ID = 0.01 A

0.01

0.04

–

Input capacitance

GS = − 3 V, VDS = 25 V, f = 1 MHz

iiss

–

110

150

Output capacitance

GS = − 3 V, VDS = 25 V, f = 1 MHz

oss

–812

Reverse transfer capacitance

GS = − 3 V, VDS = 25 V, f = 1 MHz

rss

–35

Turn-on time

on, (ton = td(on) + tr)

d(on)

–46ns

DD =30 V, VGS = − 3 V ... + 5 V, RGS =50 Ω,

D = 0.2 A

–10

Turn-off time

off, (toff = td(off) + tf)

d(off)

–15

DD =30 V, VGS = − 3 V ... + 5 V, RGS =50 Ω,

D = 0.2 A

–20

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