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BSP297 Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
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BSP297 Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
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6 / 9 page ![]() Semiconductor Group 6 Sep-12-1996 BSP 297 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 0.0 1.0 2.0 3.0 4.0 5.0 V 7.0 V DS 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 A 1.5 I D V GS [V] a a 2.0 b b 2.5 c c 3.0 d d 3.5 e e 4.0 f f 4.5 g g 5.0 h h 6.0 i i 7.0 j j 8.0 k k 9.0 l Ptot = 2W l 10.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 A 0.9 I D 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Ω 6.5 R DS (on) VGS [V] = a a 2.0 b b 2.5 c c 3.0 d d 3.5 e e 4.0 f f 4.5 g g 5.0 h h 6.0 i i 7.0 j j 8.0 k k 9.0 l l 10.0 Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs 0 1 2 3 4 5 6 7 8 V 10 V GS 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 A 2.2 I D Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, 0.0 0.4 0.8 1.2 1.6 A 2.2 I D 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 S 1.8 g fs |
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