S9013

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The S9013 is designed for use in 1W output amplifier of portable radios

in class B push-pull operation.

Features

• High Total Power Dissipation. (PT:625mW)

• High Collector Current. (IC:500mA)

• Complementary to S9012

• Excellent linearity.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................................... -55~+150

°C

Junction Temperature.................................................................................................. +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C)............................................................................................. 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage....................................................................................................... 40V

VCEO Collector to Emitter Voltage.................................................................................................... 20V

VEBO Emitter to Base Voltage............................................................................................................ 5V

IC Collector Current .................................................................................................................... 500 mA

Icp Base Current ......................................................................................................................... 100 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

40

-

-

V

IC=100uA, IE=0

BVCEO

20

-

-

V

IC=1mA, IB=0

BVEBO

5.0

-

-

V

IE=100uA, IC=0

ICBO

-

-

100

nA

VCE=25V, IE=0

IEBO

-

-

100

nA

VEB=3V, IC=0

VCE(sat)

-

-

0.6

V

IC=500mA, IB=50mA

VBE(sat)

-

-

1.2

V

IC=500mA, IB=50mA

VBE(on)

-

-

0.9

V

VCE=1V, IC=10mA

hFE1

112

180

300

VCE=1V, IC=50mA

hFE2

40

-

-

VCE=1V, IC=500mA

Cob

-

-

8

pF

VCB=10V, f=1MHz

fT

100

-

-

MHz

VCE=1V, IC=10mA, f=100MHz

Classification on hFE1

Rank

G

H

I1

I2

Range

112-166

144-202

176-246

214-300

TIGER ELECTRONIC CO.,LTD

TIGER ELECTRONIC CO.,LTD