S9015

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The S9015 is designed for use in pre-amplifier of low level and low

noise.

Features

• High Total Power Dissipation. (PD:450mW)

• Complementary to S9014

• High hFE and Good Linearity.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................... -55~+150

°C

Junction Temperature ..................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................ 450 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 50 V

VCEO Collector to Emitter Voltage ...................................................................................... 45 V

VEBO Emitter to Base Voltage .............................................................................................. 5 V

IC Collector Current ........................................................................................................ 100 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

50

-

-

V

IC=100uA, IE=0

BVCEO

45

-

-

V

IC=1mA, IB=0

BVEBO

5.0

-

-

V

IE=100uA, IC=0

ICBO

-

-

50

nA

VCB=50V, IE=0

IEBO

-

-

50

nA

VEB=5V, IC=0

VCE(sat)

-

0.20

0.7

V

IC=100mA, IB=5mA

VBE(sat)

-

0.82

1.0

V

IC=100mA, IB=5mA

VBE(on)

0.6

0.65

0.75

V

VCE=5V, IC=2mA

hFE

100

200

600

VCE=5V, IC=1mA

Cob

-

4.5

7.0

pF

VCB=10V, f=1MHz, IE=0

fT

100

190

-

MHz

VCE=5V, IC=10mA

Classification on hFE1

Rank

B

C

Range

100-300

200-600

TIGER ELECTRONIC CO.,LTD

TIGER ELECTRONIC CO.,LTD