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BSP320S Datasheet(PDF) 8 Page - Siemens Semiconductor Group |
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BSP320S Datasheet(HTML) 8 Page - Siemens Semiconductor Group |
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8 / 8 page ![]() Semiconductor Group 8 29/01/1998 BSP 320 S Avalanche energy E AS = ƒ(Tj) parameter: ID = 2.9 A, VDD = 25 V RGS = 25 Ω, L = 14.3 mH 20 40 60 80 100 120 °C 160 T j 0 5 10 15 20 25 30 35 40 45 50 55 mJ 65 E AS Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 3 A 0 2 4 6 8 10 14 Q Gate 0 2 4 6 8 10 12 V 16 V GS DS max V 0,8 DS max V 0,2 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 °C 160 T j 54 56 58 60 62 64 66 68 V 71 V (BR)DSS |
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