Document Number: 89168

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Revision: 08-Sep-09

1

Dual Trench MOS Barrier Schottky Rectifier

VT3080C, VFT3080C, VBT3080C, VIT3080C

Vishay General Semiconductor

New Product

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s, per

JESD

22-B106

(for

TO-220AB,

ITO-220AB,

and

TO-262AA package)

• Compliant

to

RoHS

directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-220AB,

ITO-220AB,

TO-263AB

and

TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

2 x 15 A

80 V

150 A

0.65 V

150 °C

TO-220AB

1

2

3

1

K

2

3

TO-263AB

1

2

K

TO-262AA

PIN 1

PIN 2

K

HEATSINK

PIN 1

PIN 2

CASE

PIN 3

PIN 1

PIN 2

PIN 3

PIN 1

PIN 2

PIN 3

K

TMBS

®

ITO-220AB

1

2

3

VT3080C

VFT3080C

VIT3080C

VBT3080C

PARAMETER

SYMBOL

VT3080C

VFT3080C

VBT3080C

VIT3080C

UNIT

Maximum repetitive peak reverse voltage

80

V

Maximum average forward rectified current (fig. 1)

per device

30

A

per diode

15

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

150

A

160

mJ

1.0

A

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

1500

V

Operating junction and storage temperature range

- 55 to + 150

°C