BTS110 datasheet(2/9 Pages) SIEMENS

2 / 9 page

Semiconductor Group

Electrical Characteristics

j = 25 °C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain-source breakdown voltage

GS = 0, ID = 1 mA

(BR)DSS

100

–

Gate threshold voltage

GS = VDS, ID = 1 mA

GS(th)

2.5

3.0

3.5

Zero gate voltage drain current

GS = 0 V, VDS = 100 V

j = 25 °C

j = 125 °C

DSS

–

100

300

µA

Gate-source leakage current

GS = 20 V, VDS = 0

j = 25 °C

j = 150 °C

GSS

–

2.0

100

4.0

µA

Drain-source on-state resistance

GS = 10 V, ID = 5 A

DS(on)

–

0.17

0.2

Ω

Dynamic Characteristics

Forward transconductance

DS ≥ 2 × ID × RDS(on)max, ID = 5 A

2.7

3.8

8.0

Input capacitance

GS = 0, VDS = 25 V, f = 1 MHz

iss

–

450

600

Output capacitance

GS = 0, VDS = 25 V, f = 1 MHz

oss

–

150

240

Reverse transfer capacitance

GS = 0, VDS = 25 V, f = 1 MHz

rss

–

130

Turn-on time

on, (ton = td(on) + tr)

CC = 30 V, VGS = 10 V, ID = 2.9 A,

GS = 50 Ω

d(on)

–20

–45

Turn-off time

off, (toff = td(off) + tf)

CC = 30 V, VGS = 10 V, ID = 2.9 A,

GS = 50 Ω

d(off)

–70

–55

BTS 110

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