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2SC4548 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC4548 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 1 page  2SC4548 0.2A , 400V NPN Plastic Encapsulated Transistor Elektronische Bauelemente 04-Nov-2011 Rev. A Page 1 of 1 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 3 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Small Flat Package High Breakdown Voltage Excellent hFE Linearity CLASSIFICATION OF hFE Product-Rank 2SC4548-D 2SC4548-E Range 60~120 100~200 Marking CN PACKAGE INFORMATION Package MPQ Leader Size SOT-89 1K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V Collector Current-Continuous IC 200 mA Collector Power Dissipation PC 500 mW Maximum Junction to Ambient RθJA 250 °C / W Junction & Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Collector-Base Breakdown Voltage V(BR)CBO 400 - - V IC=10µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 400 - - V IC=1mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 5 - - V IE=10µA, IC=0 Collector Cut-Off Current ICBO - - - 0.1 µA VCB=300V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 µA VEB=4V, IC=0 DC Current Gain hFE 60 - 200 VCE=10V, IC= 50mA Collector-Emitter Saturation voltage VCE(sat) - - 0.6 V IC=50mA, IB= 5mA Base-Emitter Saturation Voltage VBE(sat) - - 1 V IC=50mA, IB= 5mA Transition Frequency fT - 70 - MHz VCE=30V, IC=10mA Collector Output Capacitance COB - 4 - pF VCB=30V, IE=0, f=1MHz REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 4.40 4.60 G 0.40 0.58 B 3.94 4.25 H 1.50 TYP C 1.40 1.60 J 3.00 TYP D 2.25 2.60 K 0.32 0.52 E 1.50 1.85 L 0.35 0.44 F 0.89 1.20 SOT-89 A E C D B K H F G L J 1 2 3 4 B C E |
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