BC856W SERIES

BC857W SERIES

SURFACE MOUNT

PNP SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BC856W and

BC857W Series types are PNP Silicon Transistors

manufactured by the epitaxial planar process, epoxy

designed for general purpose switching and amplifier

applications.

MARKING CODE: SEE MARKING CODE TABLE

ON FOLLOWING PAGE

Note: Reverse Lead Codes Available, Add “R” to

the end of the Part # and Marking Code.

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

BC857W

BC856W

UNITS

Collector-Base Voltage

VCBO

50

80

V

Collector-Emitter Voltage

VCEO

45

65

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

100

mA

Peak Collector Current

ICM

200

mA

Peak Base Current

IBM

200

mA

Power Dissipation

PD

275

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

455

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=30V

15

nA

ICBO

VCB=30V, TA=150°C

4.0

μA

IEBO

VEB=5.0V

100

nA

BVCBO

IC=10μA (BC857W)

50

V

BVCBO

IC=10μA (BC856W)

80

V

BVCEO

IC=10mA (BC857W)

45

V

BVCEO

IC=10mA (BC856W)

65

V

BVEBO

IE=10μA

5.0

V

VCE(SAT)

IC=10mA, IB=0.5mA

0.30

V

VCE(SAT)

IC=100mA, IB=5.0mA

0.65

V

VBE(SAT)

IC=100mA, IB=5mA

0.95

V

VBE(ON)

IC=2.0mA, VCE=5.0V

0.60

0.75

V

VBE(ON)

IC=10mA, VCE=5.0V

0.82

V

Cib

VEB=0.5V, IC=0, f=1.0MHz

12

pF

Cob

VCB=10V, IE=0, f=1.0MHz

5.0

pF

fT

VCE=5.0V, IC=10mA, f=100MHz

100

MHz

NF

VCE=5.0V, IC=200μA,

RS=2.0KΩ, f=1.0KHz, BW=200Hz

10

dB

BC856AW

BC856BW

BC857AW

BC857BW

BC857CW

MIN

MAX

MIN

MAX

MIN

MAX

hFE

VCE=5.0V, IC=2.0mA

125

250

220

475

420

800

SOT-323 CASE

R1 (20-November 2009)

www.centra lsemi.com