MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

100

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current

IC

16

A

Base Current

IB

0.5

A

Power Dissipation

PD

150

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

ΘJC

1.17

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICER

VCE=100V, RBE=1.0kΩ

1.0

mA

ICER

VCE=100V, RBE=1.0kΩ, TC=150°C

5.0

mA

ICEO

VCE=50V

3.0

mA

IEBO

VEB=5.0V

5.0

mA

BVCEO

IC=100mA

100

V

VCE(SAT)

IC=10A, IB=40mA

2.5

V

VCE(SAT)

IC=16A, IB=80mA

4.0

V

VBE(ON)

VCE=3.0V, IC=10A

3.0

V

hFE

VCE=3.0V, IC=10A

1000

MJ4032 PNP

MJ4035 NPN

COMPLEMENTARY SILICON

POWER DARLINGTON TRANSISTORS

TO-3 CASE

Central

Semiconductor Corp.

TM

R0 (4-May 2009)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR MJ4032, MJ4035

types are Complementary Silicon Power Darlington

Transistors designed for general purpose and amplifier

applications.

MARKING: FULL PART NUMBER