MAXIMUM RATINGS: (TC=25°C)

SYMBOL TIP41 TIP41A TIP41B TIP41C UNITS

Collector-Base Voltage

VCBO

40

60

80

100

V

Collector-Emitter Voltage

VCEO

40

60

80

100

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

6.0

A

Peak Collector Current

ICM

10

A

Continuous Base Current

IB

2.0

A

Power Dissipation

PD

65

W

Power Dissipation (TA=25°C)

PD

2.0

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ICEO

VCE=30V (TIP41, TIP41A)

0.7

mA

ICEO

VCE=60V (TIP41B, TIP41C)

0.7

mA

ICES

VCE=Rated VCEO

0.4

mA

IEBO

VEB=5.0V

1.0

mA

BVCEO

IC=30mA (TIP41)

40

V

BVCEO

IC=30mA (TIP41A)

60

V

BVCEO

IC=30mA (TIP41B)

80

V

BVCEO

IC=30mA (TIP41C)

100

V

VCE(SAT)

IC=6.0A, IB=0.6A

1.5

V

VBE(ON)

VCE=4.0V, IC=6.0A

2.0

V

hFE

VCE=4.0V, IC=0.3A

30

hFE

VCE=4.0V, IC=3.0A

15

75

hfe

VCE=10V, IC=0.5A, f=1.0kHz

20

fT

VCE=10V, IC=0.5A, f=1.0MHz

3.0

MHz

ton

IC=6.0A, IB1= IB2=0.6A, RL=5.0Ω

0.6

μs

toff

IC=6.0A, IB1= IB2=0.6A, RL=5.0Ω

1.0

μs

TIP41

TIP41A

TIP41B

TIP41C

NPN SILICON

POWER TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR TIP41 SERIES

types are NPN Epitaxial-Base Silicon Power

Transistors designed for power amplifier and high

speed switching applications.

MARKING: FULL PART NUMBER

TO-220 CASE

R1 (13-December 2010)

www.centra lsemi.com