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BTS650P Datasheet(PDF) 8 Page - Siemens Semiconductor Group

Part # BTS650P
Description  Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)
PDF  16 Pages
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BTS650P Datasheet(HTML) 8 Page - Siemens Semiconductor Group

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BTS650P
Semiconductor Group
Page 8
1998-Nov.-2
Input circuit (ESD protection)
IN
ZD
IN
I
V bb
Rbb
V
Z,IN
V bIN
V IN
When the device is switched off (IIN = 0) the voltage
between IN and GND reaches almost Vbb. Use a
mechanical switch, a bipolar or MOS transistor with
appropriate breakdown voltage as driver.
VZ,IN = 66 V (typ).
Short circuit detection
Fault Condition:
VON > VON(SC) (6 V typ.) and t> td(SC)
(80 ...350 µs).
Short circuit
detection
Logic
unit
+ Vbb
OUT
V
ON
Current sense status output
IS
IS
R
IS
I
ZD
IS
V
bb
V
bb
R
Z,IS
V
VZ,IS = 66 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n
devices are connected in parallel).
IS = IL/kilis can be
driven only by the internal circuit as long as
Vout - VIS >
5 V. If you want measure load currents up to
IL(M), RIS
should be less than
Vbb - 5 V
IL(M) / Kilis
.
Note: For large values of
RIS the voltage VIS can
reach almost Vbb. See also overvoltage protection.
If you don't use the current sense output in your
application, you can leave it open.
Inductive and overvoltage output clamp
+ Vbb
OUT
PROFET
V
Z1
V
ON
D
S
IS
V
OUT
V
ZG
VON is clamped to VON(Cl) = 42 V typ. At inductive load
switch-off without DS, VOUT is clamped to VOUT(CL) =
-19 V typ. via VZG. With DS, VOUT is clamped to Vbb -
VON(CL) via VZ1. Using DS gives faster deenergizing of
the inductive load, but higher peak power dissipation in
the PROFET.



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