MAXIMUM RATINGS: (TC=25°C)

SYMBOL

2N3583

2N3584

2N3585

UNITS

Collector-Base Voltage

VCBO

250

375

500

V

Collector-Emitter Voltage

VCEO

175

250

300

V

Emitter-Base Voltage

VEBO

6.0

6.0

6.0

V

Continuous Collector Current

IC

1.0

2.0

2.0

A

Peak Collector Current

ICM

5.0

A

Continuous Base Current

IB

1.0

A

Power Dissipation

PD

35

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

ΘJC

5.0

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

2N3583

2N3584

2N3585

SYMBOL

TEST CONDITIONS

MIN MAX

MIN MAX

MIN MAX

UNITS

ICEV

VCE=225V, VEB=1.5V

-

1.0

-

-

-

-

mA

ICEV

VCE=340V, VEB=1.5V

-

-

-

1.0

-

-

mA

ICEV

VCE=450V, VEB=1.5V

-

-

-

-

-

1.0

mA

ICEV

VCE=225V, VEB=1.5V, TC=150°C

-

3.0

-

-

-

-

mA

ICEV

VCE=300V, VEB=1.5V, TC=150°C

-

-

-

3.0

-

3.0

mA

ICEO

VCE=150V

-

10

-

5.0

-

5.0

mA

IEBO

VBE=6.0V

-

5.0

-

0.5

-

0.5

mA

BVCEO

IC=200mA

175

-

250

-

300

-

V

VCE(SAT) IC=1.0A, IB=125mA

-

5.0

-

0.75

-

0.75

V

VBE(SAT)

IC=1.0A, IB=100mA

-

-

-

1.4

-

1.4

V

VBE(ON)

VCE=10V, IC=1.0A

-

1.4

-

1.4

-

1.4

V

hFE

VCE=10V, IC=100mA

40

-

40

-

40

-

hFE

VCE=10V, IC=500mA

40

200

-

-

-

-

hFE

VCE=2.0V, IC=1.0A

-

-

8.0

80

8.0

80

hFE

VCE=10V, IC=1.0A

10

-

25

100

25

100

fT

VCE=10V, IC=200mA, f=5.0MHz

10

-

10

-

10

-

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

-

120

-

120

-

120

pF

hfe

VCE=30V, IC=100mA, f=1.0kHz

25

350

-

-

-

-

tr

VCC=200V, IC=1.0A, IB1=100mA, RL=200Ω -

-

-

3.0

-

3.0

μs

ts

VCC=200V, IC=1.0A, IB1=IB2=100mA

-

-

-

4.0

-

4.0

μs

tf

VCC=200V, IC=1.0A, IB1=IB2=100mA

-

-

-

3.0

-

3.0

μs

Is/b

VCE=100V

350

-

350

-

350

-

mA

2N3583

2N3584

2N3585

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3583 Series

types are NPN Silicon Transistors designed for high

speed switching and high voltage amplifier applications.

MARKING: FULL PART NUMBER

TO-66 CASE

R2 (22-June 2011)

www.centra lsemi.com