2N6544

2N6545

NPN SILICON

POWER TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6544, 2N6545

types are Silicon NPN Triple Diffused Mesa Transistors

designed for high voltage, high current, high speed

switching applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C)

SYMBOL

2N6544

2N6545

UNITS

Collector-Emitter Voltage

VCEV

650

850

V

Collector-Emitter Voltage

VCEX

350

450

V

Collector-Emitter Voltage

VCEO

300

400

V

Emitter-Base Voltage

VEBO

9.0

V

Continuous Collector Current

IC

8.0

A

Peak Collector Current

ICM

16

A

Continuous Emitter Current

IE

16

A

Peak Emitter Current

IEM

32

A

Continuous Base Current

IB

8.0

A

Peak Base Current

IBM

16

A

Power Dissipation

PD

125

W

Power Dissipation, TC=100°C

PD

71.5

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

ΘJC

1.4

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

2N6544

2N6545

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICEV

VCE=Rated VCEV, VBE=1.5V

-

0.5

-

0.5

mA

ICEV

VCE=Rated VCEV, VBE=1.5V, TC=100°C

-

2.5

-

2.5

mA

ICER

VCE=Rated VCEV, RBE=50Ω, TC=100°C

-

3.0

-

3.0

mA

IEBO

VEB=9.0V

-

1.0

-

1.0

mA

BVCEX

VCL=Rated VCEX, IC=4.5A, TC=100°C

350

-

450

-

V

BVCEX

VCL=Rated VCEO-100V, IC=8.0A, TC=100°C

200

-

300

-

V

BVCEO

IC=100mA

300

-

400

-

V

VCE(SAT) IC=5.0A, IB=1.0A

-

1.5

-

1.5

V

VCE(SAT) IC=8.0A, IB=2.0A

-

5.0

-

5.0

V

VCE(SAT) IC=5.0A, IB=1.0A, TC=100°C

-

2.5

-

2.5

V

VBE(SAT)

IC=5.0A, IB=1.0A

-

1.6

-

1.6

V

VBE(SAT)

IC=5.0A, IB=1.0A, TC=100°C

-

1.6

-

1.6

V

hFE

VCE=3.0V, IC=2.5A

12

60

12

60

hFE

VCE=3.0V, IC=5.0A

7.0

35

7.0

35

TO-3 CASE

R1 (7-February 2011)

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