BUP304 datasheet(2/7 Pages) SIEMENS

Part #	BUP304

Description	IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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2 / 7 page

Semiconductor Group

Jul-30-1996

BUP 304

Maximum Ratings

Parameter

Symbol

Values

Unit

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

55 / 150 / 56

Thermal Resistance

Thermal resistance, chip case

RthJC

≤ 0.4

K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Gate threshold voltage

VGE = VCE, IC = 0.1 mA

VGE(th)

4.5

5.5

6.5

Collector-emitter saturation voltage

VGE = 15 V, IC = 15 A, Tj = 25 °C

VGE = 15 V, IC = 15 A, Tj = 125 °C

VGE = 15 V, IC = 15 A, Tj = 150 °C

VCE(sat)

3.8

2.8

4.5

4.3

3.3

Zero gate voltage collector current

VCE = 1000 V, VGE = 0 V, Tj = 25 °C

VCE = 1000 V, VGE = 0 V, Tj = 125 °C

ICES

1000

250

µA

Gate-emitter leakage current

VGE = 20 V, VCE = 0 V

IGES

0.1

100

AC Characteristics

Transconductance

VCE = 20 V, IC = 15 A

gfs

5.5

Input capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Ciss

2000

2700

Output capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Coss

160

240

Reverse transfer capacitance

VCE = 25 V, VGE = 0 V, f = 1 MHz

Crss

100

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