BUZ110SL datasheet(3/8 Pages) SIEMENS

Part #	BUZ110SL

Description	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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3 / 8 page

Semiconductor Group

28/Jan/1998

BUZ 110 SL

SPP80N05L

Electrical Characteristics,

at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 59 A

gfs

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Ciss

2600

3250

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Coss

750

940

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Crss

395

495

Turn-on delay time

VDD = 30 V, VGS = 4.5 V, ID = 80 A

RG = 2 Ω

td(on)

Rise time

VDD = 30 V, VGS = 4.5 V, ID = 80 A

RG = 2 Ω

105

Turn-off delay time

VDD = 30 V, VGS = 4.5 V, ID = 80 A

RG = 2 Ω

td(off)

Fall time

VDD = 30 V, VGS = 4.5 V, ID = 80 A

RG = 2 Ω

Gate charge at threshold

VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V

Qg(th)

Gate charge at 5.0 V

VDD = 40 V, ID = 80 A, VGS =0 to 5 V

Qg(5)

100

Gate charge total

VDD = 40 V, ID = 80 A, VGS =0 to 10 V

Qg(total)

110

165

Gate plateau voltage

VDD = 40 V, ID = 80 A

V(plateau)

4.5

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