WFD4N60B datasheet(2/7 Pages) WINSEMI

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WFD

D4N60

4N60

4N60B

2/7

Electrical Characteristics (Tc = 25°C)

Characteristics

Symbol

Test Condition

Min

Type

Max

Unit

Gate leakage current

IGSS

VGS = ±30 V, VDS = 0 V

±100

Gate−source breakdown voltage

V(BR)GSS

IG = ±10 μA, VDS = 0 V

±30

Drain cut−off current

IDSS

VDS = 600 V, VGS = 0 V

μA

VDS = 480 V, Tc = 125°°°°C

100

μA

Drain−source breakdown voltage

V(BR)DSS

ID = 250 μA, VGS = 0 V

600

Gate threshold voltage

VGS(th)

VDS = 10 V, ID =250 μA

Drain−source ON resistance

RDS(ON)

VGS = 10 V, ID =2.0A

1.7

2.4

Input capacitance

Ciss

VDS = 25 V,

VGS = 0 V,

f = 1 MHz

545

670

Reverse transfer capacitance

Crss

Output capacitance

Coss

Switching time

Rise time

VDD =300 V,

ID = 4.0A

RG=25 Ω

(Note4,5)

Turn−on time

ton

Fall time

100

Turn−off time

toff

Total gate charge (gate−source

plus gate−drain)

VDD = 480 V,

VGS = 10 V,

ID =4.0A

(Note4,5)

Gate−source charge

Qgs

3.4

Gate−drain (“miller”) Charge

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Type

Max

Unit

Continuous drain reverse current

IDR

Pulse drain reverse current

IDRP

17.6

Forward voltage (diode)

VDSF

IDR =4.0 A, VGS = 0 V

1.4

Reverse recovery time

trr

IDR = 4.0 A, VGS = 0 V,

dIDR / dt = 100 A / μs

390

Reverse recovery charge

Qrr

2.2

μC

Note 1.Repeativity rating :pulse width limited by junction temperature

2.L=18.5mH,IAS=4.0A,VDD=50V,RG=0Ω,Starting TJ=25℃

3.ISD≤4A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃

4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%

5.Essentially independent of operating temperature.

This transistor is an electrostatic sensitive device

Please handle with caution

WFD4N60B Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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