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SFP12N65 Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

Part # SFP12N65
Description  Silicon N-Channel MOSFET
PDF  7 Pages
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Manufacturer  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Direct Link  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd

SFP12N65 Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd

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SFP12N65
SFP12N65
SFP12N65
SFP12N65
2/7
Steady,
Steady,
Steady,
Steady, keep
keep
keep
keep you
you
you
you advance
advance
advance
advance
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Type
Max Unit
Gate leakage current
I
GSS
VGS = ±30 V, VDS = 0 V
-
-
±100
nA
Gate−source breakdown voltage
V
(BR)GSS
IG = ±10 μA, VDS = 0 V
±30
-
-
V
Drain cut−off current
I
DSS
VDS = 650 V, VGS = 0 V
-
-
10
μA
VDS = 480 V, Tc = 125°°°°C
C
C
C
-
-
100
μA
Drain−source breakdown voltage
V
(BR)DSS
ID = 250 μA, VGS = 0 V
650
-
-
V
Gate threshold voltage
V
GS(th)
VDS = 10 V, ID =250 μA
3
-
4.5
V
Drain−source ON resistance
R
DS(ON)
VGS = 10 V, ID = 6A
-
0.64
0.78
Ω
Forward Transconductance
gfs
VDS = 50 V, ID =6A
-
6.4
-
S
Input capacitance
C
iss
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
-
1830
-
pF
Reverse transfer capacitance
C
rss
-
155
-
Output capacitance
C
oss
-
2.0
-
Switching time
Rise time
tr
VDD =325V,
ID = 12A
RG=25Ω
(Note4,5)
-
50
-
ns
Turn−on time
ton
-
49
-
Fall time
tf
-
310
-
Turn−off time
toff
-
54
-
Total gate charge (gate−source
plus gate−drain)
Qg
VDD =520 V,
VGS = 10 V,
ID = 12A
(Note4,5)
-
51.7
-
nC
Gate−source charge
Qgs
-
9.6
-
Gate−drain (“miller”) Charge
Qgd
-
18.6
-
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Type
Max Unit
Continuous drain reverse current
I
DR
-
-
-
12
A
Pulse drain reverse current
I
DRP
-
-
-
48
A
Forward voltage (diode)
V
DSF
IDR = 10A, VGS = 0 V
-
-
1.4
V
Reverse recovery time
trr
IDR = 10 A, VGS = 0 V,
dIDR / dt = 100 A / μs
-
450
-
ns
Reverse recovery charge
Qrr
-
5.0
-
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=14mH,I
AS=12A,VDD=95V,RG=25Ω,Starting TJ=25℃
3.ISD≤10A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution



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