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BUZ21 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BUZ21 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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1 / 8 page  Semiconductor Group 1 01/97 BUZ 21 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 21 100 V 21 A 0.085 Ω TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C ID 21 A Pulsed drain current TC = 25 °C IDpuls 84 Avalanche current,limited by Tjmax IAR 21 Avalanche energy,periodic limited by Tjmax EAR 11 mJ Avalanche energy, single pulse ID = 21 A, VDD = 25 V, RGS = 25 Ω L = 340 µH, Tj = 25 °C EAS 100 Gate source voltage VGS ± 20 V Power dissipation TC = 25 °C Ptot 75 W Operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 1.67 K/W Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 |
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